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SIR476DP-T1-GE3

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SIR476DP-T1-GE3

MOSFET N-CH 25V 60A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIR476DP-T1-GE3 is an N-Channel Power MOSFET within the TrenchFET® series. This component features a 25V drain-to-source voltage and a continuous drain current rating of 60A at 25°C (Tc). The device offers a maximum on-resistance of 1.7mOhm at 20A and 10V Vgs. Key characteristics include a gate charge of 135nC at 10V and input capacitance of 6150pF at 10V Vds. It is supplied in a PowerPAK® SO-8 package, suitable for surface mounting. Power dissipation is rated at 6.25W (Ta) and 104W (Tc). This MOSFET is designed for applications requiring efficient power switching, commonly found in automotive and industrial power supply systems. Operating temperature ranges from -55°C to 150°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6150 pF @ 10 V

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