SIR472DP-T1-GE3
MOSFET N-CH 30V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR472DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 30V drain-source breakdown voltage and offers a continuous drain current of 20A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance of 12mOhm at 13.8A and 10V gate-source voltage. Designed for efficient power handling, it dissipates up to 3.9W (Ta) or 29.8W (Tc). Key parameters include a gate charge of 23 nC (max) and input capacitance of 820 pF (max). The SIR472DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package and operates across a temperature range of -55°C to 150°C. This component is utilized in applications such as automotive, computing, and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
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