SIR468DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR468DP-T1-GE3. This N-Channel Power MOSFET features a 30V drain-to-source voltage and a continuous drain current of 40A at 25°C (Tc). Designed for high-efficiency power conversion, it offers a low on-resistance of 5.7mOhm maximum at 20A and 10V. The device is housed in a PowerPAK® SO-8 package for surface mounting and supports gate drive voltages from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 1720 pF at 15V. Maximum power dissipation is 5W (Ta) and 50W (Tc). Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial power, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 15 V |