SIR436DP-T1-GE3
MOSFET N-CH 25V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR436DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 25V drain-source voltage rating and a continuous drain current capability of 40A at 25°C (Tc). Its low on-resistance, specified as a maximum of 4.6mOhm at 20A and 10V Vgs, is achieved through Vishay's TrenchFET technology. The MOSFET exhibits a maximum gate charge of 47 nC at 10V Vgs and a typical input capacitance of 1715 pF at 15V Vds.
The SIR436DP-T1-GE3 is packaged in a PowerPAK® SO-8 surface-mount configuration, enabling compact and thermally efficient designs. It supports a wide operating temperature range from -55°C to 150°C (TJ) and can dissipate up to 5W (Ta) or 50W (Tc). This component is suitable for applications in automotive, industrial, and consumer electronics requiring robust power management solutions. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1715 pF @ 15 V |