SIR432DP-T1-GE3
MOSFET N-CH 100V 28.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR432DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 28.4A at 25°C (Tc). The SIR432DP-T1-GE3 offers a low on-resistance of 30.6mOhm maximum at 8.6A and 10V Vgs, contributing to efficient power delivery. With a maximum power dissipation of 5W (Ta) and 54W (Tc), and packaged in a surface mount PowerPAK® SO-8, it is suitable for high-power density solutions in automotive and industrial power management systems. Key parameters include a gate charge of 32 nC maximum at 10V and an input capacitance of 1170 pF maximum at 50V. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 30.6mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 50 V |