SIR412DP-T1-GE3
MOSFET N-CH 25V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR412DP-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion. This device features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). The low on-resistance (Rds On) of 12mOhm at 10A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a maximum gate charge (Qg) of 16 nC at 10V and an input capacitance (Ciss) of 600 pF at 10V Vds. With a maximum power dissipation of 15.6W at 25°C (Tc), it is suitable for demanding applications. The SIR412DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, facilitating compact board designs. Its operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in automotive, industrial power supply, and server applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 15.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |