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SIR408DP-T1-GE3

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SIR408DP-T1-GE3

MOSFET N-CH 25V 50A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIR408DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding power applications. This TrenchFET® series component features a 25V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). With a low on-resistance of 6.3mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The device is housed in a PowerPAK® SO-8 package, facilitating efficient thermal management with a continuous drain power dissipation of 44.6W at 25°C (Tc). Key electrical characteristics include a gate charge (Qg) of 33 nC maximum at 10V and an input capacitance (Ciss) of 1230 pF maximum at 15V. It operates across an extended temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power management, voltage regulation, and motor control circuits across automotive and industrial sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs6.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 44.6W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V

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