SIR406DP-T1-GE3
MOSFET N-CH 25V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR406DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, housed in a PowerPAK® SO-8 package. This component offers a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 40A at 25°C (Tc). Characterized by a maximum on-resistance (Rds On) of 3.8mOhm at 15A and 10V, it supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The device exhibits a typical gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 2083 pF at 10V. Power dissipation is rated at 5W (Ta) and 48W (Tc). This MOSFET is suitable for applications in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2083 pF @ 10 V |