SIR330DP-T1-GE3
MOSFET N-CH 30V 35A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR330DP-T1-GE3 is an N-channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and supports a continuous drain current of 35A at 25°C (Tc). The SIR330DP-T1-GE3 offers a low on-resistance of 5.6mOhm maximum at 10A and 10V Vgs, contributing to reduced conduction losses. It is packaged in a PowerPAK® SO-8 surface-mount format, enabling high power dissipation of 27.7W (Tc) while maintaining a compact footprint. Typical applications include power management in automotive systems, industrial controls, and consumer electronics. Gate drive voltages range from 4.5V to 10V, with a maximum gate charge of 35nC at 10V and input capacitance of 1300pF at 15V. The device operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 27.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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