SIR172DP-T1-GE3
MOSFET N-CH 30V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR172DP-T1-GE3 is an N-channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C case temperature, with a maximum power dissipation of 29.8W (Tc). The low on-resistance of 8.9mOhm at 16.1A and 10V gate drive, combined with a gate charge of 30nC at 10V, ensures efficient switching performance. Its robust construction, utilizing the PowerPAK® SO-8 package, facilitates efficient thermal management for surface mount applications. The SIR172DP-T1-GE3 is suitable for use in power management, automotive, and industrial systems where high current handling and low conduction losses are critical. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 16.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 997 pF @ 15 V |
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