SIR168DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR168DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.4mOhm at 15A and 10V Vgs, with drive voltages ranging from 4.5V to 10V. Key characteristics include a gate charge of 75nC at 10V and input capacitance (Ciss) of 2040pF at 15V. With a maximum power dissipation of 34.7W at 25°C (Tc), this MOSFET is housed in a PowerPAK® SO-8 surface-mount package and operates across a temperature range of -55°C to 150°C (TJ). It finds application in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 15 V |