SIR112DP-T1-RE3
MOSFET N-CH 40V 37.6A/133A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV SIR112DP-T1-RE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 40V drain-source breakdown voltage and offers continuous drain current capabilities of 37.6A at 25°C ambient and 133A at 25°C case temperature. The low on-resistance, specified at 1.96mOhm maximum at 10A and 10V gate-source voltage, is achieved through Vishay's TrenchFET® technology. Power dissipation is rated at 5W ambient and 62.5W case temperature, supported by the PowerPAK® SO-8 package with excellent thermal performance. Key parameters include a 4.5V to 10V drive voltage range, maximum gate charge (Qg) of 89 nC at 10V, and input capacitance (Ciss) of 4270 pF at 20V. This MOSFET is suitable for applications in automotive, industrial power supplies, and battery management systems. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.6A (Ta), 133A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.96mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 20 V |
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