SIJK5100E-T1-GE3
N-CHANNEL 100 V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 74A (Ta), 417A (Tc) 17W (Ta), 536W (Tc) Surface Mount PowerPAK®10 x 12
Additional Information
Series: TrenchFET®RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerBSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Ta), 417A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 17W (Ta), 536W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK®10 x 12 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11480 pF @ 50 V |
| Qualification | - |
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