SIJH600E-T1-GE3
N-CHANNEL 60-V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 60 V 37A (Ta), 373A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 8 x 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 373A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.92mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 212 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9950 pF @ 30 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
