SIJH5800E-T1-GE3
N-CHANNEL 80 V (D-S) 175C MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIJH5800E-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 80 V drain-source breakdown voltage and offers a continuous drain current of 30 A at ambient temperature and 302 A at case temperature (25°C). The device exhibits a low on-resistance of 1.35 mOhm at 20 A and 10 V Vgs. Key parameters include a maximum gate charge of 155 nC at 10 V Vgs and input capacitance (Ciss) of 7730 pF at 40 V Vds. Designed for surface mounting in a PowerPAK® 8 x 8 package, it operates efficiently across a wide temperature range of -55°C to 175°C. The maximum power dissipation is 3.3 W at ambient and 333 W at case temperature. This MOSFET is suitable for applications in power management, automotive, and industrial systems requiring high efficiency and robust performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 8 x 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 302A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7730 pF @ 40 V |
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