SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJH5700E-T1-GE3 is a high-performance N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 150 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 17A at 25°C ambient, scaling to 174A at 25°C case temperature. Its low on-resistance is specified at a maximum of 4.1 mOhm at 20A and 10V gate-source voltage. The MOSFET offers a maximum junction temperature of 175°C, supported by a power dissipation of 3.3W at ambient and 333W at case temperature. Key electrical parameters include a maximum gate charge (Qg) of 140 nC at 10V and input capacitance (Ciss) of 7500 pF at 75V. The device is housed in a surface-mount PowerPAK® 8 x 8 package and supplied on tape and reel. This component is suitable for use in power supply, motor control, and power management circuits across various industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 8 x 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 75 V |
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