SIJH5100E-T1-GE3
N-CHANNEL 100 V (D-S) 175C MOSFEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJH5100E-T1-GE3 is an N-Channel Power MOSFET featuring the TrenchFET® technology. This device offers a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 28 A at 25°C ambient, scaling to 277 A at 25°C case temperature. With a maximum On-Resistance (Rds(on)) of 1.89 mOhm at 20 A and 10 V, it enables high-efficiency power conversion. The MOSFET operates across a wide temperature range of -55°C to 175°C (TJ) and dissipates up to 3.3 W (Ta) or 333 W (Tc). Key electrical parameters include a Gate Charge (Qg) of 128 nC (max) at 10 V and Input Capacitance (Ciss) of 6900 pF (max) at 50 V. The device is supplied in a PowerPAK® 8 x 8 surface mount package, suitable for applications in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 8 x 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 277A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.89mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 50 V |
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