SIJH440E-T1-GE3
MOSFET N-CH 40V 200A PPAK 8 X 8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIJH440E-T1-GE3 is an N-Channel MOSFET from the TrenchFET® Gen IV series. This device features a 40V drain-source voltage and a continuous drain current of 200A (Tc) at 25°C. The low on-resistance is specified as 0.96mOhm maximum at 20A, 10V, achievable with a gate drive voltage as low as 4.5V. Its PowerPAK® 8 x 8 package facilitates efficient thermal management, supporting a maximum power dissipation of 158W (Tc). Key parameters include a gate charge of 195 nC at 4.5V and an input capacitance of 20330 pF at 20V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding applications in power conversion, automotive systems, and industrial power supplies where high current density and low switching losses are critical.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 8 x 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.96mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20330 pF @ 20 V |
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