SIJH112E-T1-GE3
MOSFET N-CH 100V 23A/225A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 225A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8050 pF @ 50 V |
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