SIJA58DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJA58DP-T1-GE3, a TrenchFET® Gen IV N-channel MOSFET, offers 40V drain-to-source voltage and a continuous drain current of 60A at 25°C (Tc). This component features a low on-resistance of 2.65mOhm at 15A and 10V, enabled by its trench technology. With a maximum power dissipation of 27.7W (Tc), it is suitable for demanding applications. The device has a gate charge of 75 nC at 10V and input capacitance of 3750 pF at 20V. Operating across a temperature range of -55°C to 175°C (TJ), it is housed in a PowerPAK® SO-8 surface-mount package and supplied on tape and reel. This MOSFET is utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 20 V |
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