SIJA52DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJA52DP-T1-GE3 is a N-Channel TrenchFET® power MOSFET featuring a 40V drain-to-source voltage. This component offers a continuous drain current of 60A at 25°C (Tc) and a maximum power dissipation of 48W (Tc). With a low on-resistance of 1.7mOhm at 15A and 10V, it is designed for efficient power switching applications. The device is housed in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge (Qg) of 150 nC @ 20V and input capacitance (Ciss) of 7150 pF @ 20V. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7150 pF @ 20 V |
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