SIJ494DP-T1-GE3
MOSFET N-CH 150V 36.8A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIJ494DP-T1-GE3 is a 150V N-Channel MOSFET in a PowerPAK® SO-8 package. This surface mount device offers a continuous drain current of 36.8A (Tc) and a maximum power dissipation of 69.4W (Tc). Key parameters include a low on-resistance of 23.2mOhm at 15A and 10V, and a gate charge of 31 nC at 10V. Input capacitance (Ciss) is 1070 pF at 75V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply units, battery management systems, and industrial motor control.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69.4W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF @ 75 V |
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