SIJ478DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJ478DP-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 60A at 25°C (Tc). The low on-resistance (Rds On) of 8mOhm at 20A and 10V gate-source voltage (Vgs) ensures efficient power delivery. With a maximum power dissipation of 5W (Ta) and 62.5W (Tc), it offers robust thermal management. Key parameters include a gate charge (Qg) of 54 nC maximum and input capacitance (Ciss) of 1855 pF maximum. The device is housed in a PowerPAK® SO-8 surface-mount package, suitable for demanding environments. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, automotive systems, and industrial motor control applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1855 pF @ 40 V |
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