SIJ470DP-T1-GE3
MOSFET N-CH 100V 58.8A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIJ470DP-T1-GE3 is a 100V N-Channel Power MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 58.8A (Tc) with a maximum Rds(on) of 9.1mOhm at 20A and 10V. Key parameters include a gate charge (Qg) of 56 nC max at 10V and input capacitance (Ciss) of 2050 pF max at 50V. Power dissipation is rated at 5W (Ta) and 56.8W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is suitable for high-power switching applications in industries such as automotive and industrial power management.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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