SIJ462DP-T1-GE3
MOSFET N-CH 60V 46.5A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SIJ462DP-T1-GE3. This device features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 46.5A at 25°C (Tc). The low on-resistance of 8mOhm is achieved at 20A and 10V gate-source voltage. Key parameters include a maximum gate charge of 32nC at 10V and an input capacitance (Ciss) of 1400pF at 30V. The MOSFET is housed in a PowerPAK® SO-8 surface mount package, supplied on tape and reel. This component is suitable for applications in power management, automotive systems, and industrial power supplies where efficient switching and high current handling are critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46.5A(Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 30 V |
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