SIJ458DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJ458DP-T1-GE3 is a TrenchFET® N-Channel Power MOSFET designed for demanding power management applications. This component offers a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). Featuring a low on-resistance of 2.2mOhm at 20A and 10V, the SIJ458DP-T1-GE3 minimizes conduction losses. Its PowerPAK® SO-8 package provides excellent thermal performance, with a maximum power dissipation of 5W (Ta) and 69.4W (Tc). The device supports gate drive voltages from 4.5V to 10V and has a typical gate charge of 122 nC at 10V. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly employed in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 69.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 15 V |
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