SIJ450DP-T1-GE3
N-CHANNEL 45 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIJ450DP-T1-GE3 is an N-channel TrenchFET® Gen IV Power MOSFET designed for demanding applications. This component features a 45 V drain-to-source voltage (Vdss) and supports continuous drain current of 36 A at ambient temperature (Ta) and 113 A at case temperature (Tc). With a low on-resistance of 1.9 mOhm (at 10 A, 10 V), it offers efficient power delivery and minimized conduction losses. The device boasts a maximum power dissipation of 4.8 W (Ta) and 48 W (Tc). Key electrical characteristics include a maximum gate charge (Qg) of 114 nC at 10 V and an input capacitance (Ciss) of 5920 pF at 20 V. Operating within a junction temperature range of -55°C to 150°C, this MOSFET is housed in a surface mount PowerPAK® SO-8 package, supplied on tape and reel. This component is utilized in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 113A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5920 pF @ 20 V |
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