SIJ438DP-T1-GE3
MOSFET N-CH 40V 80A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIJ438DP-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 40V Drain-to-Source voltage (Vdss) and supports a continuous drain current of 80A (Tc) at 25°C. The device offers a low on-resistance of 1.35mOhm maximum at 20A and 10V (Vgs). With a maximum power dissipation of 69.4W (Tc), it is suitable for demanding thermal environments. The SIJ438DP-T1-GE3 utilizes a Surface Mount PowerPAK® SO-8 package, facilitating efficient board space utilization and thermal management. Key electrical parameters include a gate charge (Qg) of 182 nC maximum at 10V (Vgs) and input capacitance (Ciss) of 9400 pF maximum at 20V (Vds). This MOSFET is engineered for operation across a wide temperature range of -55°C to 150°C (TJ). It finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 20 V |
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