SIJ420DP-T1-GE3
MOSFET N-CH 20V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIJ420DP-T1-GE3 is an N-Channel MOSFET from the TrenchFET® series, housed in a PowerPAK® SO-8 package. This component features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 50A at 25°C (Tc). With a maximum Rds(on) of 2.6mOhm at 15A and 10V Vgs, it offers efficient power handling. The device operates with a gate-source voltage range of ±20V and features a gate charge (Qg) of 90 nC at 10V. Input capacitance (Ciss) is a maximum of 3630 pF at 10V. Power dissipation is rated at 4.8W (Ta) and 62.5W (Tc). This MOSFET is suitable for applications in power management, automotive, and industrial sectors. It operates across a temperature range of -55°C to 150°C, supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3630 pF @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
