SIJ400DP-T1-GE3
MOSFET N-CH 30V 32A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SIJ400DP-T1-GE3, offers a 30V drain-source voltage and 32A continuous drain current at 25°C (Tc). This device features a low on-resistance of 4mOhm maximum at 20A and 10V Vgs, achieved with a 4.5V drive voltage. The PowerPAK® SO-8 package enables significant power dissipation capabilities, rated at 5W (Ta) and 69.4W (Tc), making it suitable for demanding applications. Key parameters include a maximum gate charge of 150nC at 10V and input capacitance of 7765pF at 15V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is commonly utilized in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 69.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7765 pF @ 15 V |