SIHU5N50D-GE3
MOSFET N-CH 500V 5.3A TO251Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHU5N50D-GE3 is a 500V N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-251AA packaged device offers a continuous drain current of 5.3A at 25°C (Tc) and a maximum power dissipation of 104W (Tc). Featuring a low on-resistance of 1.5 Ohms maximum at 2.5A and 10V gate drive, it minimizes conduction losses. The MOSFET exhibits a gate charge of 20 nC maximum at 10V and input capacitance of 325 pF maximum at 100V. Operating across a temperature range of -55°C to 150°C (TJ), it is suitable for industrial, automotive, and power supply applications. The SIHU5N50D-GE3 is supplied in a Tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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