SIHU3N50DA-GE3
MOSFET N-CHANNEL 500V 3A IPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHU3N50DA-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.2 Ohms at 1.5A and 10V, it offers efficient switching performance. The device has a gate charge (Qg) of 12 nC maximum at 10V and an input capacitance (Ciss) of 177 pF maximum at 100V. It is packaged in an IPAK (TO-251) through-hole package, allowing for a maximum power dissipation of 69W (Tc). The operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. This MOSFET is commonly utilized in power supply applications, motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | IPAK (TO-251) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 177 pF @ 100 V |
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