SIHU3N50D-GE3
MOSFET N-CH 500V 3A TO251Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHU3N50D-GE3 is a N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 3A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 3.2 Ohms at 2.5A and a gate drive voltage of 10V. Key parameters include a Gate Charge (Qg) of 12nC at 10V and input capacitance (Ciss) of 175pF at 100V. The SIHU3N50D-GE3 dissipates up to 69W (Tc) and is housed in a TO-251AA (IPAK) package for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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