SIHU3N50D-E3
MOSFET N-CH 500V 3A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIHU3N50D-E3 is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 3A at 25°C (Tc) and a maximum power dissipation of 69W (Tc). The Rds(on) is specified at 3.2 Ohms maximum at 2.5A and 10V Vgs. Key parameters include a Vgs(th) of 5V at 250µA and a gate charge (Qg) of 12 nC at 10V. Input capacitance (Ciss) is 175 pF maximum at 100V. The device is housed in a TO-251AA (IPAK) package with through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, server applications, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
Request a Quote
Clients Also Buy
IRFIBC30G
MOSFET N-CH 600V 2.5A TO220-3
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SQD50P06-15L_T4GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
