SIHS90N65E-E3
MOSFET N-CH 650V 87A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHS90N65E-E3 is an N-channel power MOSFET designed for high-voltage applications. This through-hole component features a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 87A at 25°C. The device offers a low on-resistance of 29mOhm maximum at 45A and 10V gate drive, with a maximum power dissipation of 625W at the case. Key electrical parameters include a gate charge (Qg) of 591 nC at 10V and input capacitance (Ciss) of 11826 pF at 100V. The SIHS90N65E-E3 is housed in a SUPER-247™ (TO-274AA) package, suitable for demanding power conversion and industrial applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 591 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11826 pF @ 100 V |
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