SIHS36N50D-GE3
D SERIES POWER MOSFET SUPER-247,Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix D Series SIHS36N50D-GE3 is a 500V N-Channel Power MOSFET in a TO-247-3 package. This component offers a continuous drain current of 36A at 25°C (Tc) and a maximum power dissipation of 446W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 500V, a maximum on-resistance (Rds On) of 130mOhm at 18A and 10V, and a gate charge (Qg) of 125 nC at 10V. Input capacitance (Ciss) is specified at 3233 pF at 100V. The device supports a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. Designed for through-hole mounting, the SIHS36N50D-GE3 operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: DRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3233 pF @ 100 V |
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