SIHS36N50D-E3
MOSFET N-CH 500V 36A SUPER-247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHS36N50D-E3 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36 A at 25°C (Tc). The low on-resistance of 130 mOhm at 18 A and 10 V gate drive voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 446 W (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding thermal environments. The gate charge (Qg) is 125 nC at 10 V, and input capacitance (Ciss) is 3233 pF at 100 V. Packaged in a SUPER-247™ (TO-274AA) through-hole configuration, this MOSFET is utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3233 pF @ 100 V |
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