SIHP8N50D-GE3
MOSFET N-CH 500V 8.7A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel SIHP8N50D-GE3. This N-Channel power MOSFET features a 500V drain-source voltage and 8.7A continuous drain current at 25°C. With a maximum power dissipation of 156W, it utilizes MOSFET technology and is housed in a TO-220AB package for through-hole mounting. Key parameters include a maximum on-resistance of 850mOhm at 4A, 10V, and a gate charge of 30nC at 10V. Input capacitance (Ciss) is specified at 527pF maximum at 100V. The device operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supplies and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 100 V |
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