SIHP8N50D-E3
MOSFET N-CH 500V 8.7A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP8N50D-E3 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 8.7 A at 25°C. The device offers a low on-resistance (Rds On) of 850 mOhm at 4 A and 10 V gate-source drive, with a maximum power dissipation of 156 W (Tc). Key parameters include a gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 527 pF at 100 V. The SIHP8N50D-E3 is housed in a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial power supplies, server power, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 100 V |
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