SIHP6N40D-GE3
MOSFET N-CH 400V 6A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP6N40D-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 6A at 25°C (Tc). With a maximum power dissipation of 104W (Tc) and a low Rds On of 1 Ohm at 3A, 10V, it efficiently handles significant power loads. The device utilizes Metal Oxide technology and is supplied in a TO-220AB package suitable for through-hole mounting. Key parameters include a gate charge of 18 nC @ 10 V and input capacitance of 311 pF @ 100 V, facilitating robust switching performance. This MOSFET is commonly employed in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 100 V |
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