SIHP6N40D-BE3
N-CHANNEL 400VManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SIHP6N40D-BE3, offers a 400V drain-source breakdown voltage. This through-hole TO-220AB packaged device features a continuous drain current capability of 6A at 25°C (Tc) and a maximum power dissipation of 104W (Tc). With a typical Rds(on) of 1 Ohm at 3A and 10V, and a gate charge (Qg) of 18 nC (max) at 10V, this MOSFET is designed for efficient switching applications. Key parameters include an input capacitance (Ciss) of 311 pF (max) at 100V and a gate threshold voltage (Vgs(th)) of 5V at 250µA. The SIHP6N40D-BE3 is suitable for use in power supply, lighting, and motor control applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 100 V |
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