SIHP25N40D-E3
MOSFET N-CH 400V 25A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP25N40D-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 400V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 278W (Tc). The device exhibits a low on-resistance (Rds On) of 170mOhm at 13A and 10V gate-source voltage, and a gate charge (Qg) of 88nC at 10V. Key parameters include an input capacitance (Ciss) of 1707pF at 100V and a threshold voltage (Vgs(th)) of 5V at 250µA, with a maximum gate-source voltage of ±30V. The SIHP25N40D-E3 is housed in a TO-220AB package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1707 pF @ 100 V |
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