SIHP22N60AEL-GE3
MOSFET N-CH 600V 21A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP22N60AEL-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600 V drain-to-source voltage (Vds) and a continuous drain current (Id) of 21 A at 25°C. With a maximum power dissipation of 208 W (Tc) and a low on-resistance (Rds On) of 180 mOhm at 11 A and 10 V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 82 nC at 10 V and an input capacitance (Ciss) of 1757 pF at 100 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220AB package with through-hole mounting. This MOSFET is suitable for use in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1757 pF @ 100 V |
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