SIHP17N60D-GE3
MOSFET N-CH 600V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHP17N60D-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 17A at 25°C (Tc), with a maximum power dissipation of 277.8W (Tc). The device exhibits a low on-resistance (Rds On) of 340mOhm at 8A and 10V Vgs, with a gate charge (Qg) of 90 nC at 10V. Input capacitance (Ciss) is rated at 1780 pF at 100V. Operating across a temperature range of -55°C to 150°C (TJ), this TO-220AB packaged MOSFET is suitable for use in power supplies, motor drives, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 100 V |
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