SIHP16N50C-E3
MOSFET N-CH 500V 16A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIHP16N50C-E3 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 16A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The Rds(On) is specified at a maximum of 380mOhm at 8A and 10V gate drive. Key parameters include a gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 1900 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). The component is housed in a TO-220AB package, suitable for through-hole mounting. This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
