SIHP16N50C-BE3
MOSFET N-CH 500V 16A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP16N50C-BE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 16A at 25°C, with a maximum power dissipation of 250W (Tc). The typical Rds On is 380mOhm at 8A and 10V, with a gate charge (Qg) of 68 nC at 10V. Input capacitance (Ciss) is 1900 pF at 25V. The device utilizes a TO-220AB through-hole package, suitable for mounting in various power electronics assemblies. It operates within a temperature range of -55°C to 150°C. This MOSFET is commonly employed in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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