SIHP12N50C-E3
MOSFET N-CH 500V 12A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP12N50C-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 12A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 555mOhm at 4A and 10V Vgs. With a maximum power dissipation of 208W (Tc), this MOSFET is suitable for demanding power switching applications. Key parameters include a Gate Charge (Qg) of 48nC at 10V and Input Capacitance (Ciss) of 1375pF at 25V. The SIHP12N50C-E3 is commonly utilized in power supplies, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220-3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 555mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 25 V |
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