SIHP10N40D-GE3
MOSFET N-CH 400V 10A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHP10N40D-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 10A at 25°C (Tc). The device offers low on-resistance with a maximum Rds(On) of 600mOhm at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC (Max) at 10V and input capacitance (Ciss) of 526 pF (Max) at 100V. The maximum power dissipation is 147W (Tc). Housed in a TO-220AB package for through-hole mounting, the SIHP10N40D-GE3 operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 100 V |
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