SIHLZ34S-GE3
MOSFET N-CH 60V 30A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHLZ34S-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 60V drain-source voltage rating and a continuous drain current capability of 30A at 25°C (Tc). The MOSFET exhibits a low on-resistance (Rds(on)) of 50mOhm maximum at 18A and 5V Vgs. Key parameters include a gate charge (Qg) of 35 nC maximum at 5V and input capacitance (Ciss) of 1600 pF maximum at 25V. With a maximum power dissipation of 88W (Tc) and 3.7W (Ta), this component is suitable for demanding applications. The SIHLZ34S-GE3 is housed in a TO-263 (D2PAK) surface-mount package and operates across a wide temperature range of -55°C to 175°C (TJ). It finds application in power supplies, automotive electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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