SIHLU024-GE3
LOGIC MOSFET N-CHANNEL 60VManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHLU024-GE3 is a through-hole N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 14A at 25°C (Tc). With a maximum Rds(on) of 100mOhm at 8.4A and 5V gate-source voltage, it offers efficient power handling. Key electrical parameters include a gate charge (Qg) of 18 nC and input capacitance (Ciss) of 870 pF at 25V. The device is packaged in a TO-251AA configuration, facilitating robust mounting. Power dissipation capabilities are 2.5W (Ta) and 42W (Tc). This MOSFET is suitable for use in industrial automation, power supply units, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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